| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device which can generate many light volumes by reducing the internal loss, and can assure long lifetime even under high power usage. <P>SOLUTION: The light emitting device has a positive electrode terminal 12 and a cathode terminal 13, a light-emitting diode 14 arranged on a recess 13a formed in a cathode terminal 13, a phosphor 17 which receives the emitted light and generates fluorescence, and a transparent vessel 18 sealing the light-emitting diode 14 and the phosphor 17. The light-emitting diode 14 has a laminated structure, which consists of a substrate 21/n-type gallium nitride system semiconductor layer/gallium nitride system semiconductor active layer/p-type gallium nitride system semiconductor layer. The substrate 21 has an electric connector at the bottom of the recess 13a. The junction electrode for positive electrodes which consists of solid solution of Cr, and Pt and Au is formed in the topmost front surface of the p-type gallium nitride system semiconductor layer. Positive electrode terminal 12 and electrode 210 are connected electrically; around the electrode 210, a conductive clear electrode layer 211 is formed; and the light-emitting device 11 and the side view of the conductive clear electrode layer 211 are shielded from the atmosphere by a transparency passivation layer 212. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
