METHOD OF MANUFACTURING LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE

摘要

A method for manufacturing a vertical type light emitting device is provided to improve the reliability and lifetime of the device and the yield by emitting a local heat generated from a laser lift-off process and exhausting N2 gas without the damage of a semiconductor layer. A plurality of semiconductor layers are grown on an insulation substrate(10). A unit device region is defined by etching the semiconductor layers. An electrode is formed on the semiconductor layer. A passivation layer(30) is formed on the resultant structure to insulate a surface exposed to the outside due to the etching process on the semiconductor layer. A metal support portion(50) is formed on the electrode. A laser irradiating process is performed from the metal support side to the etched portion of the resultant structure. The insulation substrate is removed. Metal pads are formed on the semiconductor layers, respectively.