发明名称 Microwave Plasma Processing Apparatus
摘要 A microwave plasma processing apparatus which easily ensures uniformity and stability of plasma in response to changes of process conditions and the like. The microwave plasma processing apparatus 100 generates plasma of a process gas in a chamber by microwave and performs plasma processing to a work to be processed by using the plasma. On a plate 27 composed of a conductor covering the outer circumference of a micro wave transmitting board 28 , two or more holes 42 for propagating microwave from an edge part of the microwave transmitting board 28 to an inner part of the holes 42 are formed. Volume adjusting mechanisms 43 and 45 adjust the volume of the holes to adjust impedance of each unit when the microwave transmitting board 28 is divided by unit to which each of the holes 42 belongs, and electric field distribution of the microwave transmitting board 28 is controlled.
申请公布号 US2007283887(A1) 申请公布日期 2007.12.13
申请号 US20050576852 申请日期 2005.10.06
申请人 TOKYO ELECTRON LIMITED 发明人 TIAN CAIZHONG;NOZAWA TOSHIHISA
分类号 H01L21/3065;C23C16/00 主分类号 H01L21/3065
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