发明名称 CAPACITOR, CHIP CARRIER TYPE CAPACITOR, SEMICONDUCTOR DEVICE, MOUNTING SUBSTRATE, AND PROCESS FOR FABRICATING CAPACITOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a capacitor in which high frequency characteristics are improved more. <P>SOLUTION: The capacitor comprises first and second square pads, a first electrode provided with an opening for passing a second via and connected with the first pad through a first via, a second electrode provided with an opening for passing first and second vias for every via and connected with the second pad through a third via, and a dielectric disposed between the first and second electrodes and provided with an opening for passing first and second vias for every via. The second via is connected at the center of the second pad, and the third via is connected with the second pad between the center and the vertex thereof. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007184324(A) 申请公布日期 2007.07.19
申请号 JP20060000142 申请日期 2006.01.04
申请人 NEC CORP 发明人 SHIBUYA AKINOBU;YAMAMICHI SHINTARO;TAKEMURA KOICHI;ISHII YASUHIRO
分类号 H01G4/33;H01G4/40;H01L21/822;H01L23/12;H01L27/04 主分类号 H01G4/33
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