| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge stripe type semiconductor laser device which suppresses a film exfoliation of a current constriction layer on a ridge having a high perpendicularity, makes light confinement of the current constriction layer function normally, and has high reliability. SOLUTION: After an n-type (Al<SB>0.7</SB>Ga<SB>0.3</SB>)<SB>0.5</SB>In<SB>0.5</SB>P clad layer 103, an active layer 104, a p-type (Al<SB>0.7</SB>Ga<SB>0.3</SB>)<SB>0.5</SB>In<SB>0.5</SB>P clad layer 105, a p-type Ga<SB>0.5</SB>In<SB>0.5</SB>P intermediate layer 107, and a p-type GaAs contact layer 108 are grown successively on an n-type GaAs substrate 102, a ridge is formed, an insulating layer 106 is formed; and finally a p-type electrode 109 and an n-type electrode 101 are formed. When the p-type contact layer 108 is viewed, with the n-type substrate 102 set downward in cross section perpendicular to a stripe direction, an inclination is formed, on at least the one side of the p-type contact layer 108 with respect to a lower side of the p-type contact layer 108, and the width of the lower side is substantially equal to the width of an upper side of the p-type P intermediate layer 107, formed directly under the p-type contact layer 108. COPYRIGHT: (C)2009,JPO&INPIT
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