| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, which has higher mechanical strength while preventing an increase in resistance loss as much as possible, and to provide a method of manufacturing the same. SOLUTION: A method of manufacturing a semiconductor device includes: a step of forming first wiring 17 in a predetermined area in a first region on a first interlayer dielectric 11 by using a first conductive film; a step of forming second wiring 20 in a predetermined area in a second region, for which lower mechanical strength is required in comparison with the first region, by using a conductive material having a lower melting point and a higher conductivity than those of the first conductive film; a step of forming a second interlayer dielectric 24; a step of forming contact plugs; a step of forming a first electrode 29 in a predetermined area in a first region on the second interlayer dielectric 24 by using a third conductive film; and a step of forming a second electrode 30 in a predetermined area in a second region by using a conductive material having a lower melting point and a higher conductivity than those of the third conductive film. COPYRIGHT: (C)2009,JPO&INPIT
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