| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a gate leak current and to reduce a gate capacitance in a trench gate type transistor. SOLUTION: A trench 14 is formed on an N-type semiconductor layer 12. In the trench 14, thin silicon oxide films 15B are formed in a region to be a transistor activation region on the N-type semiconductor layer 12. On the region not to be the activation region, a silicon oxide film 15A thicker than the silicon oxide film 15B is formed. Furthermore, an extracting section 16S extending outward from the inside of the trench 14 forms a gate electrode 16 which is brought into contact with the silicon oxide film 15A. Thus, in the extracting section 16S of the gate electrode 16, since a long distance is secured between the gate electrode 16 and the corner section 12C of the N-type semiconductor layer 12, the occurrence of the gate leak current is prevented and the gate capacitance can be reduced. COPYRIGHT: (C)2009,JPO&INPIT
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