| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device manufacturing method for producing less electromigration and stress migration by removing a reactive product after forming an aluminum wire with dry-etching. SOLUTION: On a substrate 11, an aluminum film 17 is formed via an insulating film 12. A mask material 18 is used for dry-etching the aluminum film to form the aluminum wire 15. After removing the mask material, Ar is ion-implanted into the reactive product 19 formed at least on the side wall of the aluminum wire to generate breaches in the reactive product. Wet etching is applied to the surface layer of the aluminum wire to float and peel off the reactive product. COPYRIGHT: (C)2009,JPO&INPIT
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