| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate structure having low voltage and high electrostatic attractive force when using an insulating substrate, and to provide its manufacturing method. SOLUTION: The substrate structure 10 to be fixed with an electrostatic chuck mechanism comprises at least: a first polycrystalline silicon film 12 formed on the backside or the backside and side faces of the substrate 11 formed of an insulating material; and a first silicon insulating film 13 formed as the uppermost layer on part of the backside or the backside and side faces. COPYRIGHT: (C)2009,JPO&INPIT
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