发明名称 Lithographic apparatus with adjusted exposure slit shape enabling reduction of focus errors due to substrate topology and device manufacturing method.
摘要 A lithographic apparatus includes an illumination system to condition a radiation beam; a patterning device support to support a patterning device, the patterning device capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate, and a projection system to project the patterned radiation beam in a scanning exposure along a scanning direction onto a target portion of the substrate. The illumination system is configured to form in a plane of the patterning device a slit shaped image. The slit shaped image has a curved shape with a slit curvature in the scanning direction, with a length in the scanning direction and a width perpendicular to the scanning direction. The slit shaped image is configured to create a curved pattern image portion of the patterned radiation beam in an image plane of the projection system.
申请公布号 NL1036232(A1) 申请公布日期 2009.06.18
申请号 NL20081036232 申请日期 2008.11.24
申请人 ASML NETHERLANDS B.V. 发明人 SVEN GUNNAR KRISTER MAGNUSSON;MARTIN JULES MARIE-EMILE DE NIVELLE;FRANK STAALS;WIM TJIBBO TEL
分类号 G03F7/207;G03B27/52 主分类号 G03F7/207
代理机构 代理人
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