| 摘要 |
PURPOSE: A resistor of a flash memory device and a method of fabrication the same are provided to implement a resistor with uniform resistance by forming a conductive film to have a uniform thickness. CONSTITUTION: A first insulating layer(101) is formed on a semiconductor substrate(100). A trench for a register is formed on the first insulating layer. A conductive film(104) for the register is formed in the trench for the register. The conductive film for the register is a polysilicon layer. The conductive film for the register has the uniform thickness. A second insulating layer(105) is formed on the first insulating layer including the conductive film for the register. A contact(107) is passed through a second insulating layer and is connected to both ends of the conductive film for the register.
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