| 摘要 |
The present invention relates to a semiconductor light emitting device which comprises: a plurality of semiconductor layers including a first semiconductor layer which has first conductivity, a second semiconductor layer which has second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer and generates light by recombination of electrons and holes; a first electrode unit which supplies one of the electrons and the holes to the first semiconductor layer; a second electrode unit which supplies the other of the electrons and the holes to the second semiconductor layer; an insulation reflection layer which is formed on the plurality of semiconductor layers and reflects the light from the active layer, wherein at least one of the first electrode unit or the second electrode unit includes an upper electrode which is formed on the insulation reflection layer, a connection-type ohmic electrode which is electrically connected to the semiconductor layers under the insulation reflection layer and a branch electrode branched from the connection-type ohmic electrode, and an electrical connection which penetrates the insulation reflection layer and connects the connection-type ohmic electrode to the upper electrode, and a reinforcement unit which is formed integrally with the connection-type ohmic electrode and the branch electrode at the portion where the connection-type ohmic electrode and the branch electrode are connected, and the width of the branch electrode is smaller than the diameter of the connection-type ohmic electrode. |
