| 摘要 |
A semiconductor FinFET device includes a fin structure disposed on a substrate. The fin structure includes a channel layer. Further, the semiconductor FinFET device includes a gate structure including a gate electrode layer and a gate dielectric layer and covering a portion of the fin structure. Side-wall insulating layers are disposed on both main side surfaces of the gate electrode layer. The semiconductor FinFET device includes a source and a drain, each of the source and the drain including a stress induction layer formed by removing the fin structure not covered by the gate structure, and disposed within a recess portion. The stress induction layer includes first to third stress induction layers sequentially disposed. In the source, an interface between the first stress induction layer and a channel layer is positioned under one of the side-wall insulating layers adjacent to the source or the gate electrode. |
