发明名称 Power semiconductor device
摘要 An insulating substrate includes a base portion that is made of metal and serves as a radiating surface, an insulating layer, and a circuit pattern. The insulating substrate has convex warpage in the radiating surface at ambient temperature. A power semiconductor element is mounted on the circuit pattern. A sealing material has a thickness greater than a thickness of the insulating substrate. The sealing material has a linear expansion coefficient greater than a linear expansion coefficient of the insulating substrate in an in-plane direction of a mounting surface of the insulating substrate. A heat conduction layer is located on the radiating surface of the base portion and is solid at ambient temperature and is liquid at a temperature higher than or equal to a phase-change temperature higher than ambient temperature.
申请公布号 US9412679(B1) 申请公布日期 2016.08.09
申请号 US201514925444 申请日期 2015.10.28
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 Nakahara Kenta;Yoshida Hiroshi
分类号 H01L23/34;H01L23/528;H01L23/24 主分类号 H01L23/34
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A power semiconductor device, comprising: a housing; at least one insulating substrate that is attached to said housing, has a radiating surface and a mounting surface opposite to said radiating surface, and has convex warpage in said radiating surface at ambient temperature, said mounting surface being housed in said housing, said insulating substrate including a base portion that comprises metal and serves as said radiating surface,an insulating layer located on said base portion, anda circuit pattern that is located on said insulating layer and serves as said mounting surface; at least one power semiconductor element mounted on said circuit pattern of said insulating substrate; at least one wiring portion that connects said power semiconductor element and a portion of said circuit pattern of said insulating substrate remote from said power semiconductor element; a plurality of electrodes that are attached to said housing and are electrically connected with at least any one of said circuit pattern of said insulating substrate and said power semiconductor element; a sealing material that seals said power semiconductor element on said insulating substrate in said housing, said sealing material having a thickness greater than a thickness of said insulating substrate in a perpendicular direction to said mounting surface of said insulating substrate, said sealing material having a linear expansion coefficient greater than a linear expansion coefficient of said insulating substrate in an in-plane direction of said mounting surface of said insulating substrate; and a heat conduction layer that is located on said radiating surface and is solid at ambient temperature and is liquid at a temperature higher than or equal to a phase-change temperature higher than ambient temperature.
地址 Tokyo JP