| 摘要 |
A Cu—Co—Si alloy having an improved balance between electrical conductivity and strength is provided. Disclosed is a copper alloy for electronic materials, which contains 0.5% to 4.0% by mass of Co and 0.1% to 1.2% by mass of Si, with the balance being Cu and unavoidable impurities, and in which the mass % ratio of Co and Si (Co/Si) is 3.5≦Co/Si≦5.5, an area ratio of discontinuous precipitation (DP) cells is 5% or less, and an average value of a maximum width of discontinuous precipitation (DP) cells is 2 μm or less. |
| 主权项 |
1. A copper alloy for electronic materials, the copper alloy consisting of:
0.5% to 4.0% by mass of Co and 0.1% to 1.2% by mass of Si, optionally at least one alloying element selected from the group consisting of Cr, Sn, P, Mg, Mn, Ag, As, Sb, Be, B, Ti, Zr, Al, and Fe, the total amount of said alloying elements being 2.0% by mass or less, the balance of the copper alloy being Cu and unavoidable impurities, wherein the mass % ratio of Co and Si (Co/Si) is 3.5 ≦Co/Si ≦5.5, an area ratio of discontinuous precipitation (DP) cells is 5% or less, and an average value of a maximum width of discontinuous precipitation (DP) cells is 2 μm or less. |
