发明名称 Semiconductor device
摘要 A variable capacitor is formed from a pair of electrodes and a dielectric interposed between the electrodes over a substrate, and an external input is detected by changing capacitance of the variable capacitor by a physical or electrical force. Specifically, a variable capacitor and a sense amplifier are provided over the same substrate, and the sense amplifier reads the change of capacitance of the variable capacitor and transmits a signal in accordance with the input to a control circuit.
申请公布号 US9519175(B2) 申请公布日期 2016.12.13
申请号 US201514849923 申请日期 2015.09.10
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kato Kiyoshi;Saito Toshihiko
分类号 G09G3/36;G02F1/1333;G06F3/044;G02F1/1362;H01L29/786;G02F1/133;G02F1/1345;H01L27/12;H01L27/13;H01L27/32 主分类号 G09G3/36
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A semiconductor device comprising: a first substrate; a plurality of sensors over the first substrate, each of the plurality of sensors comprising a first electrode; a thin film transistor over the first substrate; an insulating film over the thin film transistor; a pixel electrode over the insulating film, the pixel electrode electrically connected to the thin film transistor; a liquid crystal over the first electrode and the pixel electrode; and a second substrate over the liquid crystal, wherein the plurality of sensors are arranged in two-dimensions, wherein each of the plurality of sensors outputs a capacitance change, wherein each of the first electrode and the pixel electrode comprises a transparent electrode, and wherein the first electrode is electrically connected to a first switch and a second switch.
地址 Kanagawa-ken JP