发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve manufacturing yield and reliability, etc. of semiconductor devices, by controlling voids generated between a substrate and semiconductor elements and among a plurality of semiconductor elements. <P>SOLUTION: A substrate 2, having an element-mounting part 2a is provided to attract a region, except for the element mounting part 2a, and is arranged on an attracting stage 21 including attraction holes with a diameter of 0.5 mm or larger, and of 1.0 mm or smaller. A first semiconductor element 5 is sucked with a suction rubber collet 22, having a Shore A hardness of 50 or larger and 70 or smaller, and is then bonded to the element mounting part 2a of the substrate 2 attracted and held by the suction stage 21. Then, a second semiconductor element on which a second adhesive layer, including a remaining volatile matter 0.2% or lower, is arranged on a first semiconductor element, and the second adhesive layer is adhered through the heating process in the temperature range of 120&deg;C or higher, and of 150&deg;C or lower. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007188944(A) 申请公布日期 2007.07.26
申请号 JP20060003663 申请日期 2006.01.11
申请人 TOSHIBA CORP 发明人 YOSHIMURA ATSUSHI;OKUBO TADANORI;TANE YASUO
分类号 H01L25/18;H01L25/065;H01L25/07 主分类号 H01L25/18
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