GATE STRUCTURE AND METHOD OF FORMING THE SAME, NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A gate structure, a method for forming the same, a non-volatile memory device and a method for manufacturing the non-volatile memory device are provided to improve data sustaining ability by storing electric charge in each charge trap film. A tunnel oxide layer(12) is formed on a substrate(10). A first charge trap film(14) is formed on the tunnel oxide layer, and is made of material having trap site to store electric charge. A second charge trap film(16) is formed on the first charge trap, and is made of nano crystals, and a dielectric layer(18) is formed on the second charge trap film. A conductive film pattern(20) is formed on the dielectric layer. The first charge trap film is made of silicon nitride.