Semi-conductor non-volatile memory and method of writing the same.

摘要

A semi-conductor non-volatile memory comprises one or more integrated memory cells. Each memory cell comprises a first semi-conductor region having a first surface, and electric charge storage structure (5) disposed on the first surface for storing electric charge and a first gate (7) electrically coupled to the electric charge storage structure. There is a second region electrically connected to the first surface and a second gate (9) electrically coupled to either the electric charge storage structure or the first gate. A random access potential setting means (9 - 11) sets a random access potential to the first gate (7).