| 摘要 |
PURPOSE: To provide a semiconductor layer having stable facet coatings by selecting the material of SiOx in the specified composition of dielectric layer for forming the facet coatings of semiconductor substrate for a semiconductor laser, so that a moisture content on specified conditions is less than a specified value or absolute stress is less than a specified value. CONSTITUTION: A semiconductor laser 33 includes a semiconductor substrate 20 having two counter facets and facet coatings 41 and 401 respectively arranged at the facets. The dielectric layer forming the facet film 41 and 401 contains the material of composition SiOx (1<=x<2), and that material is selected so as to have the moisture content less than 100μm<-1> after soaking in deionized water at 99 deg.C for time enough for saturating the material with the moisture (a), and so as to have the absolute stress less than 90 MPa in the material of SiOx composition (b). Then, the semiconductor layer 33 having the stable facet coatings 41 and 401 can be provided.
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