| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition having enhanced etching resistance, which achieves a fine pattern; and a method of forming a photoresist pattern using the same. <P>SOLUTION: The photoresist composition includes: a non-linear low molecular compound; a cross-linking agent; a photosensitive material; and an organic solvent. In the photoresist composition, the fine pattern with a molecular-level resolution can be achieved because of the reduction of the size of a building block. Furthermore, since the photoresist composition includes the cross-linking agent, it can enhance the etching resistance. <P>COPYRIGHT: (C)2007,JPO&INPIT |
