| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate type bipolar transistor wherein the durability can be improved by suppressing the latch up operation. SOLUTION: An n--type epitaxial layer 2 is formed on a p-type Si substrate 1, a gate electrode 4 is disposed thereon through a gate insulation film 3, p-type impurity diffused regions 6, 7 are formed at the ends of the gate electrode 4 on a surface layer part of the epitaxial layer 2, and an n+-type impurity diffused region 8 is formed in the interior thereof. A first emitter electrode 9 contacts both diffused regions 6, 7 and the region 8. A p+type impurity diffused region 10 is formed on a surface layer part of the epitaxial layer 2, a collector electrode 11 contacts the diffused region 10, and a second emitter electrode 12 is formed on the entire back surface of the Si substrate 1.
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