| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device with the thickness of an insulation film on a redundant fuse controlled accurately, using relatively low cost apparatus. SOLUTION: A metal interconnection in the uppermost layer is patterned to form a redundant fuse section 11 and a bonding pad section 12. Thereafter, a p-TEOS film 13 is deposited through the plasma CVD method, and then a p-SiN film 14 is also deposited through the plasma CVD method. After etching the p-SiN film 14 and the p-TEOS film 13 to form an opening 15 for a pad, a polyimide film 18 having openings 16, 17 is formed. Next, using a relatively low cost plasma etching apparatus, the p-SiN film 14 in the openings 16, 17 is etched. Since the p-SiN film has high selectivity, the p-TEOS film on the redundant fuse 11 can be kept in substantially the thickness as that when it was formed.
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