| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate which has an alignment mark of higher recognition property in the alignment mark formation region thereof, while having a trench groove wherein an epitaxial film is buried and having a region whose surface is flattened, and also to provide its manufacturing method. <P>SOLUTION: An alignment pattern consisting of a trench groove 21 is formed in an alignment mark formation region A1, and a light transmitting film material 3a is formed so as to cover the alignment pattern. Then, a trench groove 22 is formed in a diffusion layer formation region A2, and an epitaxial film 4 is formed so as to be embedded in the trench groove 22. Thereafter, an alignment mark M1a is formed by performing flattening treatment for a substrate surface with an alignment pattern covered with the film material 3a. Mask alignment of a diffusion layer pattern and a mask pattern to be processed in a post-process is carried out using the alignment mark M1a formed in this manner. <P>COPYRIGHT: (C)2007,JPO&INPIT |
