| 摘要 |
A weak programming method of a non-volatile memory. A first voltage is applied to a substrate during a first duration, while a control-gate voltage, such as zero volt, is applied to the gate, such that the leakage of the bit line is reduced and electron-hole pairs are generated. In the second duration, a second voltage is applied to the substrate, and a third voltage is applied to the gate to enhance the capability of injecting electrons into the floating gate of the non-volatile memory. Therefore, the distribution of the threshold voltage is more concentrated. The second voltage has a polarity the same as that of the first voltage, while the polarity of the third voltage is opposite to that of the second voltage.
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