| 发明名称 |
Crystalline layer on a Si substrate, is formed by epitaxial precipitation on a porous region of the substrate |
| 摘要 |
<p>A process for forming a crystalline layer (2) composed of a semiconductor compound on a Si substrate comprises epitaxial precipitation. The substrate is formed with a surface that has a porous region (1). The crystalline layer is formed on the porous region.</p> |
| 申请公布号 |
DE102004059651(A1) |
申请公布日期 |
2006.06.14 |
| 申请号 |
DE20041059651 |
申请日期 |
2004.12.10 |
| 申请人 |
ROBERT BOSCH GMBH |
发明人 |
LAERMER, FRANZ;KRONMUELLER, SILVIA;REICHENBACH, RALF;FEYH, ANDO;DADGAR, ARMIN |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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