| 发明名称 |
MULTILAYER STRUCTURE ON SEMICONDUCTOR SUBSTRATE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric element excellent in characteristics by using a γ-Al<SB>2</SB>O<SB>3</SB>single crystal film as a buffer layer on a silicon substrate. <P>SOLUTION: The γ-Al<SB>2</SB>O<SB>3</SB>single crystal film 6 is formed on the lowermost silicon substrate 4 of an MFMIS-structure thin film 2. An LaNiO<SB>3</SB>film 8 as an oxide conductor is formed as a lower electrode immediately above the γ-Al<SB>2</SB>O<SB>3</SB>single crystal film 6. A PZT thin film 10 as a ferroelectric material is formed immediately above the LaNiO<SB>3</SB>film 8. A Pt layer 12 as an upper electrode is formed on the upper surface of the PZT thin film 10. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008227345(A) |
申请公布日期 |
2008.09.25 |
| 申请号 |
JP20070066393 |
申请日期 |
2007.03.15 |
| 申请人 |
TOYOHASHI UNIV OF TECHNOLOGY |
发明人 |
ISHIDA MAKOTO;SAWADA KAZUAKI;AKAI DAISUKE;ITO MIKINORI;ODONARI TATSUHITO;KIKUCHI KENRO |
| 分类号 |
H01L41/08;H01L21/336;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;H01L41/09;H01L41/187;H01L41/22;H01L41/319 |
主分类号 |
H01L41/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
