| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with highly hermetical optical-functioning unit such as an optical emitter and an optical receiver. <P>SOLUTION: The semiconductor device has an n-type semiconductor layer 110 formed on a substrate, a p-type semiconductor layer 120 laminated on the n-type semiconductor layer, an optical emitter 140 and an optical receiver 150 on posts P1 and P2 partitioned by annular grooves 130-1 and 130-2, p-side driving electrodes 160 and 180 formed on the surface of the optical emitter 140 and the optical receiver 150, and sealed electrodes 170 and 190 electrically connected to the p-side driving electrodes 160 and 180 and formed to surround the optical emitter 140 and the optical receiver 150. <P>COPYRIGHT: (C)2008,JPO&INPIT |
