| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode applied to a flip-chip package that is provided with preferable heat radiating effect and reflection effect, can effectively use a light-emitting area, eliminates the use of a transparent conductive layer as a contact conductive layer for current distribution and the use of a transmitting passivation layer as a protection layer, and also provide a method for manufacturing the light-emitting diode and a method for packaging the light-emitting diode. <P>SOLUTION: A light-emitting diode structure is formed, a conductor reinforcing layer that is electrically in contact with a p-side electrode and an n-side electrode of the light-emitting diode structure is formed on the same light-emitting diode structure, a bump forming region layer is formed on the conductor reinforcing layer, the conductor reinforcing layer is exposed by forming a couple of electrode regions in the bump forming region, a metal bump electrically connected to the conductor reinforcing layer is respectively formed in the couple of electrode regions, the bump forming region layer is removed, and the couple of bumps connected electrically are separated by selectively removing the conductor reinforcing layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
