发明名称 |
PLASMA SOURCE WITH SEGMENTED MAGNETRON CATHODE |
摘要 |
A sputtering apparatus includes a chamber, an anode, a cathode assembly comprising target material, and a magnet. A platen supports a substrate. A power supply is electrically connected to the cathode assembly and generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train. |
申请公布号 |
WO2008130507(A3) |
申请公布日期 |
2009.01.08 |
申请号 |
WO2008US04605 |
申请日期 |
2008.04.10 |
申请人 |
ZOND, INC.;CHISTYAKOV, ROMAN;ABRAHAM, BASSAM HANNA |
发明人 |
CHISTYAKOV, ROMAN;ABRAHAM, BASSAM HANNA |
分类号 |
H01J37/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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