发明名称 PLASMA SOURCE WITH SEGMENTED MAGNETRON CATHODE
摘要 A sputtering apparatus includes a chamber, an anode, a cathode assembly comprising target material, and a magnet. A platen supports a substrate. A power supply is electrically connected to the cathode assembly and generates a plurality of voltage pulse trains comprising at least a first and a second voltage pulse train. The first voltage pulse train generates a first discharge that causes sputtering of a first layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the first voltage pulse train. The second voltage pulse train generates a second discharge from the feed gas that causes sputtering of a second layer of target material having properties that are determined by at least one of a peak amplitude, a rise time, and a duration of pulses in the second voltage pulse train.
申请公布号 WO2008130507(A3) 申请公布日期 2009.01.08
申请号 WO2008US04605 申请日期 2008.04.10
申请人 ZOND, INC.;CHISTYAKOV, ROMAN;ABRAHAM, BASSAM HANNA 发明人 CHISTYAKOV, ROMAN;ABRAHAM, BASSAM HANNA
分类号 H01J37/34 主分类号 H01J37/34
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