发明名称 |
Encapsulated silicidation for improved SiC processing and device yield |
摘要 |
A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a suicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.
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申请公布号 |
US2009057906(A1) |
申请公布日期 |
2009.03.05 |
申请号 |
US20070896034 |
申请日期 |
2007.08.29 |
申请人 |
BUCHOFF STEVEN MARK;LOYD ANDREW CHRISTIAN;HOWELL ROBERT S |
发明人 |
BUCHOFF STEVEN MARK;LOYD ANDREW CHRISTIAN;HOWELL ROBERT S. |
分类号 |
H01L23/48;H01L21/477 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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