| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of ensuring high reliability by enhancing the strength of a pad electrode with respect to the bonding to the pad electrode, and preventing the entry of moisture etc. into an element formation region. <P>SOLUTION: The semiconductor device has contact holes 6, 10, 14 annularly formed in a strip-like shape surrounding the pad electrode 18; connecting conductors 7, 11 and metal wiring layers 8, 12 filling the contact hole 6; and part of a third metal wiring layer 15 filling the third contact hole 14 annularly formed in the strip-like shape surrounding the pad electrode 18. Accordingly, interlayer insulating films 5, 9, 13 directly under the pad electrode 18 are surrounded by the metal wiring layers 8, 12, 15 and the connecting conductors 7, 11. Consequently, even when cracking occurs in the interlayer insulating films 5, 9, 13, the moisture entering via the crack is prevented from entering the element region formed outside the pad electrode 18 so that the high reliability can be ensured. <P>COPYRIGHT: (C)2007,JPO&INPIT |
