| 发明名称 | Storage element and memory | ||
| 摘要 | A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. | ||
| 申请公布号 | US9378794(B2) | 申请公布日期 | 2016.06.28 |
| 申请号 | US201214359488 | 申请日期 | 2012.11.19 |
| 申请人 | Sony Corporation | 发明人 | Higo Yutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Asayama Tetsuya;Yamane Kazutaka;Uchida Hiroyuki |
| 分类号 | G11C11/16;H01F10/32;H01L43/02;G11C11/56 | 主分类号 | G11C11/16 |
| 代理机构 | K&L Gates LLP | 代理人 | K&L Gates LLP |
| 主权项 | 1. A storage element comprising: a magnetization fixed layer; a magnetization free layer including a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers; and a nonmagnetic intermediate layer that is a tunnel insulating layer and is formed between the magnetization fixed layer and the magnetization free layer, wherein magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. | ||
| 地址 | Tokyo JP | ||