Thin film transistor

摘要

Disclosed herein are thin film transistors (TFTs) and techniques for fabricating TFTs. A major plane of the gate electrode of the TFT may be vertically oriented with respect to a horizontal layer of polysilicon in which the TFT resides. An interface between the gate electrode and gate dielectric may be vertically oriented with respect to a horizontal layer of polysilicon in which the TFT resides. The TFT may have a channel width that is defined by a thickness of the horizontal layer of polysilicon. The TFT may be formed by etching a hole in a layer of polysilicon. Then, a gate electrode and gate dielectric may be formed in the hole by depositing layers of dielectric and conductor material on the sidewall. The body may be formed in the horizontal layer of polysilicon outside the hole.

主权项

1. A method of forming a thin film transistor (TFT) comprising:
forming a layer of polysilicon; forming layers of another material above and below the layer of polysilicon; forming a first hole in the layer of polysilicon and the layers of the other material, the first hole having a sidewall; forming a gate dielectric layer on the sidewall leaving a second hole inside the gate dielectric layer; forming a gate electrode layer in the second hole on the gate dielectric layer; forming a body in the layer of polysilicon adjacent to the gate dielectric layer; and forming a drain region and a source region for the TFT adjacent the body in the layer of polysilicon.