Work function metal fill for replacement gate fin field effect transistor process

摘要

A method of forming a semiconductor device that includes forming a sacrificial gate structure on a channel portion of a fin structure, wherein the angle at the intersection of the sidewall of the sacrificial gate structure and an upper surface of the channel portion of the fin structure is obtuse. Epitaxial source and drain region structures are formed on a source region portion and a drain region portion of the fin structure. At least one dielectric material is formed on the sidewall of the sacrificial gate structure. The sacrificial gate structure may be removed to provide an opening to the channel portion of the fin structure. A function gate structure is formed in the opening. At least one angle defined by the intersection of a sidewall of the functional gate structure and an upper surface of the channel portion of the fin structure is obtuse.

主权项

1. A method of forming a semiconductor device comprising:
forming a sacrificial gate structure on a channel portion of a fin structure, wherein at least one angle defined by the intersection of a sidewall of the sacrificial gate structure and an upper surface of the channel portion of the fin structure is obtuse; forming a spacer from a single material layer in directly contact with a sidewall of the sacrificial gate structure and having a base surface in direct contact with the fin structure; forming source and drain regions including epitaxial material in direct contact with a sidewall of the spacer that is opposite the sidewall of the spacer contacting the sacrificial functional structure; forming at least one dielectric material on the sidewall of the spacer; removing the sacrificial gate structure to provide an opening to the channel portion of the fin structure; and forming a functional gate structure in the opening to the channel portion of the fin structure, the functional gate structure comprising a gate dielectric layer and a gate conductor wherein the gate conductor being in direct contact with the spacer, wherein at least one angle defined by an intersection of a sidewall of the functional gate structure and an upper surface of the channel portion of the fin structure is obtuse.