发明名称 |
Integrated III-nitride D-mode HFET with cascoded pair half bridge |
摘要 |
There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithically integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithically integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET. |
申请公布号 |
US9406674(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201414326333 |
申请日期 |
2014.07.08 |
申请人 |
Infineon Technologies Americas Corp. |
发明人 |
Briere Michael A. |
分类号 |
H01L27/088;H03K17/10;H03K17/22;H03K17/567;H01L27/06;H01L25/07 |
主分类号 |
H01L27/088 |
代理机构 |
Farjami & Farjami LLP |
代理人 |
Farjami & Farjami LLP |
主权项 |
1. An integrated half bridge circuit including a high side switch and a low side switch, said integrated half bridge circuit comprising:
a die including first and second depletion mode III-Nitride field-effect transistors (FETs) integrated thereon; a group IV enhancement mode FET; said group IV enhancement mode FET cascoded with said second depletion mode III-Nitride FET to provide a normally OFF composite cascoded switch as said low side switch; a group IV enhancement mode insulated gate bipolar transistor (IGBT) enable switch being in a conduction path of said high side switch, said group IV enhancement mode IGBT enable switch having an emitter coupled to a switch node of said integrated half bridge circuit and a collector coupled to a load; said group IV enhancement mode IGBT enable switch being configured to prevent shorting across a high voltage rail and a low voltage rail. |
地址 |
El Segundo CA US |