Method and structure for vertical tunneling field effect transistor and planar devices

摘要

The present disclosure provides one embodiment of a method of forming a tunnel field effect transistor (TFET). The method includes forming a semiconductor mesa on a semiconductor substrate; performing a first implantation to the semiconductor substrate and the semiconductor mesa to form a drain of a first type conductivity; forming a first dielectric layer on the semiconductor substrate and sidewall of the semiconductor mesa; forming a gate stack on the sidewall of the semiconductor mesa and the first dielectric layer; forming a second dielectric layer on the first dielectric layer and the gate stack; and forming, on the semiconductor mesa, a source having a second type conductivity opposite to the first type conductivity. The gate stack includes a gate dielectric and a gate electrode on the gate dielectric. The source, drain and gate stack are configured to form the TFET.

主权项

1. A method of forming a transistor, the method comprising:
forming a mesa on a semiconductor substrate, the mesa having a first type conductivity; forming a first dielectric layer on a sidewall of the mesa; forming a gate stack on the sidewall of the mesa and the first dielectric layer, wherein the gate stack includes a gate electrode; after forming the gate stack, forming a protection layer over the mesa; performing an implantation process to substrate while the mesa is protected by the protection layer; forming a second dielectric layer on the gate stack; and forming, on the mesa, a region having a second type conductivity opposite to the first type conductivity, wherein the forming, on the mesa, the region having a second type conductivity opposite to the first type conductivity includes recessing the mesa and epitaxy and growing a semiconductor material on the mesa.