发明名称 Electronic device and method for fabricating an electronic device
摘要 An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main face to the second main face. A metal layer is disposed above the second main face and the side faces, the metal layer including a porous structure.
申请公布号 US9406646(B2) 申请公布日期 2016.08.02
申请号 US201113282927 申请日期 2011.10.27
申请人 Infineon Technologies AG 发明人 Hosseini Khalil;Kahlmann Frank
分类号 H01L23/48;H01L23/00;H01L23/29;H01L23/31;H01L21/56;H01L29/40;H01L23/552 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An electronic device comprising: a semiconductor chip comprising a first main face, a second main face, and side faces each connecting the first main face to the second main face; an interdiffusion prevention layer directly disposed on the second main face and the side faces, wherein the interdiffusion prevention layer comprises a single Ti layer or a layer stack comprising two or more layers of Ti and a Ti alloy; and a metal layer directly disposed on the interdiffusion prevention layer, wherein the metal layer comprises an upper horizontal portion disposed above the second main face, a vertical portion disposed above the side faces, and a lower horizontal portion extending in a plane of the first main face, and wherein the lower horizontal portion is shaped in a form of a closed ring surrounding the semiconductor chip, wherein the metal layer is a porous metal layer.
地址 Neubiberg DE