发明名称 |
Electronic device and method for fabricating an electronic device |
摘要 |
An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main face to the second main face. A metal layer is disposed above the second main face and the side faces, the metal layer including a porous structure. |
申请公布号 |
US9406646(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201113282927 |
申请日期 |
2011.10.27 |
申请人 |
Infineon Technologies AG |
发明人 |
Hosseini Khalil;Kahlmann Frank |
分类号 |
H01L23/48;H01L23/00;H01L23/29;H01L23/31;H01L21/56;H01L29/40;H01L23/552 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An electronic device comprising:
a semiconductor chip comprising a first main face, a second main face, and side faces each connecting the first main face to the second main face; an interdiffusion prevention layer directly disposed on the second main face and the side faces, wherein the interdiffusion prevention layer comprises a single Ti layer or a layer stack comprising two or more layers of Ti and a Ti alloy; and a metal layer directly disposed on the interdiffusion prevention layer, wherein the metal layer comprises an upper horizontal portion disposed above the second main face, a vertical portion disposed above the side faces, and a lower horizontal portion extending in a plane of the first main face, and wherein the lower horizontal portion is shaped in a form of a closed ring surrounding the semiconductor chip, wherein the metal layer is a porous metal layer. |
地址 |
Neubiberg DE |