| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor including an oxide semiconductor layer and having the excellent electric characteristics, and a manufacturing method for a semiconductor device including fewer extra steps by manufacturing a structure of a plurality of kinds of thin film transistors on the same substrate to configure a plurality of kinds of circuits.SOLUTION: An oxide semiconductor layer is stacked after a metal thin film is formed on an insulating surface, and then an oxidation process such as a thermal process is performed to oxidize the metal thin film partly or entirely. The thin film transistors are formed with the different structures in the circuit where the high-speed operation is required, such as the logic circuit, and in the matrix circuit.SELECTED DRAWING: Figure 1 |
