| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method capable of precisely forming a fine pattern which is so fine that the impact of forward scattering may be extended to an adjacent pattern. <P>SOLUTION: The exposure energy distribution when charged particle beams are incident into a resist film is approximated by the sum of a plurality of component distributions, each expressed by a Gaussian distribution. For at least some of the component distributions, a pattern density map wherein a pattern arrangement plane is divided into a plurality of small regions is defined for each component distribution. For each pattern density map, the following first and second sub-processes are repeated. In the first sub-process, a pattern density is found for each of the small regions. In the second sub-process, an exposure energy to be given to the small region whereon attention is focused is found based on the energy accumulation rate, an exposure energy assigned to a pattern in a first small region, the area of the pattern, and the pattern density of the first small region. Then an effective pattern density is calculated. From the effective pattern density, an exposure energy is calculated at an evaluation point on the pattern arrangement plane. <P>COPYRIGHT: (C)2007,JPO&INPIT |
