| 发明名称 |
V-SHAPE RESISTIVE MEMORY ELEMENT |
| 摘要 |
A resistive memory element is provided, having a bottom electrode, a top electrode, and an active region sandwiched therebetween. The resistance memory element has a V-shape. Methods of manufacturing the V-shape resistive memory element and crossbar structures employing the V-shape resistive memory element are also provided. |
| 申请公布号 |
US2016315256(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201315103604 |
申请日期 |
2013.12.13 |
| 申请人 |
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
发明人 |
Ge Ning;Yang Jianhua;Ho Chaw Sing |
| 分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory element including a bottom electrode, a top electrode, and an active region sandwiched therebetween, the resistance memory element having a V-shape. |
| 地址 |
Houston TX US |
