Gallium trichloride injection scheme

摘要

A system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The system includes sources of the reactants, one of which is a gaseous Group III precursor having one or more gaseous gallium precursors and another of which is a gaseous Group V component, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their monomer forms.

主权项

1. A system for forming a Group III-V semiconductor material comprising gallium, the system comprising:
a reaction chamber comprising:
a non-planar, infrared-transparent floor comprising a lower region integral and continuous with an elevated region;a stabilizing plate laterally adjacent the elevated region of the non-planar, infrared-transparent floor and overlying the lower region of the non-planar, infrared-transparent floor;a susceptor positioned within an opening in the stabilizing plate;a slit-shaped inlet extending through the elevated region of the non-planar, infrared-transparent floor and configured to provide a reactant toward the susceptor through substantially uniform laminar flow;at least one additional inlet proximate the slit-shaped inlet; andan infrared-absorbent plate laterally between the slit-shaped inlet and the stabilizing plate; heating structures external to the reaction chamber and configured to heat at least one gaseous gallium trichloride precursor to at least 700° C. to decompose substantially all dimers, trimers or other molecular variations of the at least one gaseous gallium trichloride precursor into its monomer form, the heating structures comprising at least one infrared radiation source and at least one infrared absorbent material; a source of the at least one gaseous gallium trichloride precursor external to the reaction chamber and in fluid communication with the slit-shaped inlet; and a source of gaseous ammonia external to the reaction chamber and in fluid communication with the at least one additional inlet.