| 摘要 |
This silicon carbide semiconductor device is provided with: a silicon carbide semiconductor substrate (1); a semiconductor layer (2) that is disposed on a first main surface of the silicon carbide semiconductor substrate (1); a first electrode that is provided on the semiconductor layer (2); and a second electrode that is provided on a second main surface of the silicon carbide semiconductor substrate, said second main surface being on the reverse side of the first main surface. A main current flows in the perpendicular direction with respect to the silicon carbide semiconductor substrate (1), the second electrode has a laminated structure wherein a carbon layer (92), a metal silicide layer (94), and a metal film (11) are laminated in this order from the silicon carbide semiconductor substrate side, and a plurality of pieces of carbon aggregate (95) formed of aggregated carbon are scattered in the metal silicide layer (94). |
