METHOD FOR GROWING SIC SINGLE CRYSTAL

摘要

PURPOSE:To provide a method for growing an SiC single crystal ingot having few crystal defects and a low impurity content so as to produce a high quality SiC wafer. CONSTITUTION:Powdery SiC as starting material is sublimed by heating and an SiC single crystal is grown on a seed crystal made of an SiC single crystal and kept at a temp. below the temp. of the starting material. In this sublimation- recrystallization method, the temp. of the powdery SiC is slowly reduced with the lapse of growth time.