发明名称 Control circuit for power device and level shifting circuit and semiconductor integrated circuit device
摘要 In a control circuit for controlling a power transistor included in a power device, the transistor is turned-off when a drop of a control voltage level or overcurrent in the power transistor is detected. Signals for discriminating the overcurrent from the voltage drop are generated and individually outputted from the control circuit, whereby the reason why the transistors were turned-off can be monitored. After a predetermined time period has passed from the overcurrent had been detected, the transistor is automatically turned-on to recover the operation of the transistor. A capacitor for supplying the control power voltage is re-charged during the time period. It is not necessary to carefully determine the on/off timings of the input signal for waiting the recovery of the control power voltage.
申请公布号 US5510943(A) 申请公布日期 1996.04.23
申请号 US19930163509 申请日期 1993.12.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUKUNAGA, MASANORI
分类号 G01R19/165;H02M7/48;H02M7/5387;(IPC1-7):H02H3/08 主分类号 G01R19/165
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