Strained superlattice semiconductor photodetector having a side contact structure

摘要

PCT No. PCT/JP93/01848 Sec. 371 Date Nov. 18, 1994 Sec. 102(e) Date Nov. 18, 1994 PCT Filed Dec. 21, 1993 PCT Pub. No. WO94/15367 PCT Pub. Date Jul. 7, 1994There is provided an MSM type semiconductor photodetector having a strained superlattice structure that shows a high responsiveness and, at the same time, a reduced dark current. Such a strained superlattice semiconductor photodetector comprising semiconductor layers including a photodetective layer having an intra-planar compressive strain type strained superlattice layer formed on a semiconductor substrate by epitaxial growth is characterized in that the epitaxially grown layers are partly removed from the side walls of the semiconductor layers to produce cut-out sections (grooves 8a, 8b) and arranging electrodes in said cut-out sections respectively. Consequently, the fast responsiveness of the semiconductor photodetector is remarkably improved and the dark current of the device is greatly reduced.