Full open P-N junction glass passivated silicon semiconductor diode chip and preparation method thereof

摘要

In a preparation stage, the whole open P-N junction of the diode is coated with a passivation glass layer. The passivation glass layer is applied to the whole cutting area of each diode chip and fired separately during the preparation procedure. The open P-N junction of the glass passivated silicon semiconductor diode chip has a positive beveled cut, thereby the reverse voltage resistance may be enhanced and the possibility of leakage may be reduced.