发明名称 |
Memory cell array and method of forming the same |
摘要 |
A memory cell array includes memory cells with storage capacitor and an access transistor. The access transistors are formed in active areas. The memory cell array further includes bit lines oriented in a first direction and word lines oriented in a second direction. The active areas extend in the second direction. The bottom side of each gate electrode of the transistors is disposed beneath the bottom side of each word line. In addition, the word lines are disposed above the bit lines.
|
申请公布号 |
US7274060(B2) |
申请公布日期 |
2007.09.25 |
申请号 |
US20050152793 |
申请日期 |
2005.06.15 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
POPP MARTIN;JAKUBOWSKI FRANK;HOLZ JUERGEN;HEINECK LARS |
分类号 |
H01L21/8244;H01L29/94 |
主分类号 |
H01L21/8244 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|