Process for etching silicon anisotropically

摘要

The object is to avoid undercutting at projecting corners in a process for etching silicon anisotropically in which mutually merging structures of different size are etched out of the surface of a silicon wafer (1) using a suitable masking and a suitable etchant. The structures are broken down by suitable masking into individual structures (2, 3) and sucessively etched out of the Si wafer (1) in at least two etching steps. Between the etching steps, the already etched individual structures (2) are masked by a further masking layer in order to etch out the subsequent individual structures (3). The process according to the invention is used, in particular, in the production of optoelectronic transducer modules.