SEMICONDUCTOR DEVICE, MASK FOR PHOTOLITHOGRAPHY, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE MASK FOR PHOTOLITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To minimize the total length of boundary lines for main fields and sub-fields formed in an effective pattern region per chip area, in a semiconductor device manufactured by using an EB lithography system. SOLUTION: Patterns for a semiconductor device are delineated by using the EB lithography system. The EB lithography system proceeds pattern delineation on each of predetermined main fields, and in each main field, proceeds the pattern delineation on each of predetermined sub-fields. All four sides of the semiconductor device are determined so as to overlap with the boundary lines for main fields or the sub-fields.